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| geometry process details process cpd06 general purpose rectifier 3 amp glass passivated rectifier chip process glass passivated mesa die size 89 x 89 mils die thickness 10.2 mils anode bonding pad area 66 x 66 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? backside cathode principal device types 1n5400 thru 1n5408 1n5550 thru 1n5554 1n5624 thru 1n5627 cmr3-02 series gross die per 4 inch wafer 1,490 www.centralsemi.com r4 (22-march 2010)
process cpd06 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD0610
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